Interconnect Materials Enabling IGBT Modules to Achieve Stable Short-Circuit Failure Behavior

Robustness of MW-Level IGBT modules against gate oscillations under short circuit events

Article history: Received 26 May 2015 Received in revised form 30 June 2015 Accepted 3 July 2015 Available online xxxx

Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions

Two extreme configurations under short circuit conditions leading to the punch through Trench IGBT failure under the effect of the temperature and the gate resistance have been studied. By analyzing internal physical parameters, it was highlighted that the elevation of the temperature causes an acceleration of the failure which is due to a thermal runaway phenomenon, whereas the influence of th...

Failure mechanism of trench IGBT under short-circuit after turn-off

Power semiconductor devices under short-circuit are submitted to high current and high voltage simultaneously that induce high electrical and thermal stresses. Several types of event leading to failure can appear under short circuit conditions in IGBT depending on the device structure, current load and voltage levels. One particular short circuit event appears once the device has turned off. Af...

A robust electro-thermal IGBT SPICE model: Application to short-circuit protection circuit design

A Discussion on IGBT Short-circuit Behavior and Fault Protection Schemes

AbstructIGBT’s are available with short-circuit withstand times approaching those of bipolar transistors. These IGBT’s can therefore be protected by the same relatively slow-acting circuitry. The more efficient IGBT’s, however, have lower shortcircuit withstand times. While protection of these types of IGBT’s is not difficult, it does require a reassessment of the traditional protection methods...